| | | OUM nonvolatile semiconductor memory technology overview by Stephen J. Hudgens | | 3 |
| | | Modeling considerations for phase change electronic memory devices by Guy Wicker | | 13 |
| | | Thermal analysis and structural design of phase change random access memory by Rong Zhao and Ler Ming Lim and Luping Shi and Hock Koon Lee and Hongxin Yang and Tow Chong Chong | | 23 |
| | | Investigation on ultra-high density and high speed non-volatile phase change random access memory (PCRAM) by material engineering by E. G. Yeo and L. P. Shi and R. Zhao and T. C. Chong | | 29 |
| | | A computational study of oxygen contamination in Sb[subscript 2]Te[subscript 3] by John E. Boyd and Arthur Edwards and Andrew C. Pineda | | 35 |
| | | Localized light focusing and super resolution readout via chalcogenide thin film by Junji Tominaga and Paul Fons and Takayuki Shima and Kazuma Kurihara and Takashi Nakano and Alexander Kolobov and Stephane Petit | | 41 |
| | | Impact of material crystallization characteristics on the switching behavior of the phase change memory cell by Thomas Gille and Ludovic Goux and Judit Lisoni and Kristin De Meyer and Dirk J. Wouters | | 53 |
| | | Kinetics of optically-induced crystallization and structure of Ag[subscript x](As[subscript 0.48]S[subscript 0.26]Se[subscript 0.26])[subscript 100-x] chalcogenide films by Milos Krbal and Tomas Wagner and Miloslav Frumar and Milan Vlcek and Petr Bezdicka | | 59 |
| | | Ag-Sb-S thin films prepared by RF magnetron sputtering and their properties by Jan Gutwirth and Tomas Wagner and Milan Vlcek and Cestmir Drasar and Ludvik Benes and Martin Hrdlicka and Miloslav Frumar and Jiri Schwarz and Helena Ticha | | 65 |
| | | Dielectric constants and endurance of chalcogenide phase-change non-volatile memory by Semyon D. Savransky and Eugenio F. Prokhorov | | 75 |
| | | Laser synthesis of Sn-Ge-Sb-Te phase change materials by W. D. Song and L. P. Shi and X. S. Miao and T. C. Chong | | 81 |
| | | Characteristics of Si-Sb-Te films for phase change memory by Jie Feng and Yin Zhang and Baowei Qiao and Yanfei Cai and Yinyin Lin and Tingao Tang and Bingchu Cai and Bomy Chen | | 87 |
| | | Phase transformations in bulk (Ge[subscript 2]Se[subscript 7])[subscript 88]Bi[subscript 5]Sb[subscript 7] by Guy J. Adriaenssens | | 93 |
| | | Preparation of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] thin film for phase change random access memory by RF magnetron sputtering and DC magnetron sputtering by Shin Kikuchi and Dong Yong Oh and Isao Kimura and Yutaka Nishioka and Koukou Suu | | 99 |
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